STD16N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 12A DPAK
$1.13
Available to order
Reference Price (USD)
2,500+
$1.03515
5,000+
$1.00116
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STD16N60M2 by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STD16N60M2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSP149L6906HTSA1
Vishay Siliconix
IRFR310TRPBF-BE3
Taiwan Semiconductor Corporation
TSM056NH04LCV RGG
Panjit International Inc.
PJD6N10A_L2_00001
IXYS
IXTP2N100P
NXP USA Inc.
BUK958R5-40E,127
Infineon Technologies
IPAN60R600P7SXKSA1
Vishay Siliconix
IRFI530GPBF
Infineon Technologies
ISC027N10NM6ATMA1
Infineon Technologies