FCP36N60N
onsemi
onsemi
MOSFET N-CH 600V 36A TO220-3
$9.82
Available to order
Reference Price (USD)
1+
$7.35000
10+
$6.63900
100+
$5.49990
500+
$4.64582
1,000+
$4.07642
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FCP36N60N by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FCP36N60N is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPW60R060P7XKSA1
Toshiba Semiconductor and Storage
TJ80S04M3L,LXHQ
STMicroelectronics
STB100N6F7
Diodes Incorporated
DMP3130L-7
onsemi
NTMFS4108NT1G
Renesas Electronics America Inc
RJK03B7DPA-00#J53
onsemi
FDS4141
onsemi
NTD6600N-1G
Renesas Electronics America Inc
NP50P03YDG-E1-AY
Infineon Technologies