FDP6670AL
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 80A TO220-3
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
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The FDP6670AL from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDP6670AL offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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