FF225R12ME4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 320A 1050W
$171.86
Available to order
Reference Price (USD)
10+
$109.66000
Exquisite packaging
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Discover the power of Infineon Technologies's FF225R12ME4BOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF225R12ME4BOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF225R12ME4BOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 320 A
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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