FF450R07ME4BOSA1
Infineon Technologies
Infineon Technologies
GBT MODULE 650V 450A
$207.48
Available to order
Reference Price (USD)
1+
$207.48000
500+
$205.4052
1000+
$203.3304
1500+
$201.2556
2000+
$199.1808
2500+
$197.106
Exquisite packaging
Discount
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The FF450R07ME4BOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FF450R07ME4BOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FF450R07ME4BOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD-3
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