MG12200D-BN2MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MODULE 1200V 290A 1050W D3
$139.02
Available to order
Reference Price (USD)
1+
$133.73000
10+
$125.67400
25+
$121.64560
Exquisite packaging
Discount
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The MG12200D-BN2MM by Littelfuse Inc. redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the MG12200D-BN2MM in high-efficiency servo controllers for manufacturing automation. Littelfuse Inc. combines innovation with quality in every MG12200D-BN2MM module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 290 A
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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