FS50R12W1T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$57.58
Available to order
Reference Price (USD)
1+
$57.58000
500+
$57.0042
1000+
$56.4284
1500+
$55.8526
2000+
$55.2768
2500+
$54.701
Exquisite packaging
Discount
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The FS50R12W1T7B11BOMA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FS50R12W1T7B11BOMA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FS50R12W1T7B11BOMA1 module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 7.9 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: -
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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