FF450R17ME4PB11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 450A
$382.54
Available to order
Reference Price (USD)
6+
$245.81667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FF450R17ME4PB11BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FF450R17ME4PB11BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FF450R17ME4PB11BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FF450R17ME4PB11BOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
BYM300B170DN2HOSA1
Infineon Technologies
FP15R12KT3BPSA1
Infineon Technologies
FP15R12W1T4PBPSA1
Infineon Technologies
FZ600R17KE3S4HOSA1
Infineon Technologies
FS200R07A5E3S6BPSA1
Infineon Technologies
FF600R17ME4PBOSA1
Infineon Technologies
FS3L100R07W3S5B11BPSA1
Infineon Technologies
IFF300B12N2E4PB11BPSA1
Infineon Technologies
FS450R17OE4PBOSA1
Infineon Technologies