FP15R12W1T4PBPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 30A 20MW
$46.15
Available to order
Reference Price (USD)
1+
$37.70000
30+
$33.69600
120+
$30.53700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FP15R12W1T4PBPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FP15R12W1T4PBPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FP15R12W1T4PBPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FZ600R17KE3S4HOSA1
Infineon Technologies
FS200R07A5E3S6BPSA1
Infineon Technologies
FF600R17ME4PBOSA1
Infineon Technologies
FS3L100R07W3S5B11BPSA1
Infineon Technologies
IFF300B12N2E4PB11BPSA1
Infineon Technologies
FS450R17OE4PBOSA1
Infineon Technologies
FP15R12W1T7PB11BPSA1
Infineon Technologies
FF1200R17IP5BPSA1
Microchip Technology
APTGT75A120T1G
Infineon Technologies