DF200R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1040W
$148.72
Available to order
Reference Price (USD)
10+
$94.13800
Exquisite packaging
Discount
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Infineon Technologies's DF200R12KE3HOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the DF200R12KE3HOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1040 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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