FS50R06W1E3B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 70A 205W
$42.20
Available to order
Reference Price (USD)
24+
$33.44958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS50R06W1E3B11BOMA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS50R06W1E3B11BOMA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 205 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
MIXA40WB1200TED
Microchip Technology
APTGT50SK170T1G
Infineon Technologies
FF300R06KE3B2HOSA1
Infineon Technologies
FZ2400R12HE4B9HOSA2
Infineon Technologies
F3L50R06W1E3B11BOMA1
Infineon Technologies
DF200R12KE3HOSA1
Infineon Technologies
F3L400R10W3S7FB11BPSA1
Microchip Technology
APT40GP60JDQ2
Infineon Technologies
FS50R12W1T7B11BOMA1
IXYS