FF6MR12W2M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE LOW POWER EASY
$433.92
Available to order
Reference Price (USD)
1+
$433.92000
500+
$429.5808
1000+
$425.2416
1500+
$420.9024
2000+
$416.5632
2500+
$412.224
Exquisite packaging
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Discover the high-performance FF6MR12W2M1PB11BPSA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the FF6MR12W2M1PB11BPSA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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