FGA30N60LSDTU
onsemi
onsemi
IGBT TRENCH/FS 600V 60A TO3P
$5.07
Available to order
Reference Price (USD)
1+
$5.49000
10+
$4.95300
450+
$3.88838
900+
$3.50671
1,350+
$2.98444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGA30N60LSDTU Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the FGA30N60LSDTU provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
- Power - Max: 480 W
- Switching Energy: 1.1mJ (on), 21mJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: 18ns/250ns
- Test Condition: 400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
STMicroelectronics
STGP10NC60S
Infineon Technologies
IGP50N60T
IXYS
IXYX140N120A4
Diodes Incorporated
DGTD65T40S1PT
onsemi
NGTG25N120FL2WG
Infineon Technologies
IKZA75N65RH5XKSA1
onsemi
FGH75T65UPD
STMicroelectronics
STGWA8M120DF3
IXYS
IXYX100N120B3
Renesas Electronics America Inc