FGY40T120SMD
onsemi
onsemi
IGBT 1200V 80A TO-247
$6.18
Available to order
Reference Price (USD)
1+
$12.07000
10+
$10.94400
450+
$8.74124
900+
$8.00698
1,350+
$7.02796
Exquisite packaging
Discount
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Upgrade your power management systems with the FGY40T120SMD Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGY40T120SMD provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGY40T120SMD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 882 W
- Switching Energy: 2.7mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 370 nC
- Td (on/off) @ 25°C: 40ns/475ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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