FQB9P25TM
onsemi
onsemi
MOSFET P-CH 250V 9.4A D2PAK
$1.59
Available to order
Reference Price (USD)
1+
$1.59000
500+
$1.5741
1000+
$1.5582
1500+
$1.5423
2000+
$1.5264
2500+
$1.5105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQB9P25TM from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FQB9P25TM offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
R6535KNZ4C13
Fairchild Semiconductor
SSS6N70A
Diodes Incorporated
ZVN3320ASTOA
Vishay Siliconix
SI7738DP-T1-E3
Infineon Technologies
IPDD60R190G7XTMA1
Renesas Electronics America Inc
2SK1566-E
Nexperia USA Inc.
PH7030AL,115
Vishay Siliconix
SIHA18N60E-GE3
Vishay Siliconix
SI3493BDV-T1-GE3
Fairchild Semiconductor