FS100R12KT4_B11
Infineon Technologies
Infineon Technologies
IGBT MODULE
$101.77
Available to order
Reference Price (USD)
1+
$101.77000
500+
$100.7523
1000+
$99.7346
1500+
$98.7169
2000+
$97.6992
2500+
$96.6815
Exquisite packaging
Discount
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Engineered for excellence, the FS100R12KT4_B11 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS100R12KT4_B11 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS100R12KT4_B11.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 515 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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