FS10R12VT3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 16A 64W
$15.97
Available to order
Reference Price (USD)
40+
$18.35950
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FS10R12VT3BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS10R12VT3BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS10R12VT3BOMA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Power - Max: 64 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
F43L50R07W2H3FB11BPSA2
Infineon Technologies
FP10R12W1T7B3BOMA1
Microchip Technology
APT100GN120J
Microchip Technology
APTGT300DA120G
Infineon Technologies
IFF450B12ME4PB11BPSA1
Microchip Technology
APTGLQ100A120T3AG
IXYS
IXYN110N120C4
Infineon Technologies
F450R07W1H3B11ABOMA1
Infineon Technologies
FF300R12KT3EHOSA1
Infineon Technologies