FS225R12KE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 320A 1100W
$425.18
Available to order
Reference Price (USD)
4+
$351.26250
Exquisite packaging
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The FS225R12KE4BOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FS225R12KE4BOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 320 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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