FS50R12W1T7BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
$57.58
Available to order
Reference Price (USD)
1+
$57.58000
500+
$57.0042
1000+
$56.4284
1500+
$55.8526
2000+
$55.2768
2500+
$54.701
Exquisite packaging
Discount
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Engineered for excellence, the FS50R12W1T7BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS50R12W1T7BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS50R12W1T7BOMA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 7.9 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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