FS950R08A6P2BBPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 750V 950A
$1,048.80
Available to order
Reference Price (USD)
1+
$1048.80000
500+
$1038.312
1000+
$1027.824
1500+
$1017.336
2000+
$1006.848
2500+
$996.36
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS950R08A6P2BBPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS950R08A6P2BBPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS950R08A6P2BBPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS950R08A6P2BBPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 950 A
- Power - Max: 870 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-1
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