GT090N06D52
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
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The GT090N06D52 by Goford Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the GT090N06D52 ensures consistent and dependable performance. Goford Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 30V
- Power - Max: 62W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
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