GT30J121(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 30A 170W TO3PN
$2.91
Available to order
Reference Price (USD)
1+
$2.90960
500+
$2.880504
1000+
$2.851408
1500+
$2.822312
2000+
$2.793216
2500+
$2.76412
Exquisite packaging
Discount
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The GT30J121(Q) by Toshiba Semiconductor and Storage is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the GT30J121(Q) delivers robust performance. Toshiba Semiconductor and Storage's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate GT30J121(Q) into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
- Power - Max: 170 W
- Switching Energy: 1mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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