HGT1S20N36G3VL
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
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Optimize your power systems with the HGT1S20N36G3VL Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGT1S20N36G3VL delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 395 V
- Current - Collector (Ic) (Max): 37.7 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 5V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 28.7 nC
- Td (on/off) @ 25°C: -/15µs
- Test Condition: 300V, 10A, 25Ohm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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