RGTV80TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
2US SHORT-CIRCUIT TOLERANCE, 650
$7.10
Available to order
Reference Price (USD)
1+
$7.10000
500+
$7.029
1000+
$6.958
1500+
$6.887
2000+
$6.816
2500+
$6.745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGTV80TK65DGVC11 by Rohm Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RGTV80TK65DGVC11 delivers robust performance. Rohm Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RGTV80TK65DGVC11 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 85 W
- Switching Energy: 1.02mJ (on), 710µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 39ns/113ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
Related Products
STMicroelectronics
STGW19NC60H
STMicroelectronics
STGWA60NC60WDR
Rohm Semiconductor
RGCL80TS60GC11
Alpha & Omega Semiconductor Inc.
AOB10B65M1
Infineon Technologies
AIKW40N65DF5XKSA1
STMicroelectronics
STGW8M120DF3
onsemi
NGTB40N120IHRWG
STMicroelectronics
STGF19NC60WD
Infineon Technologies
AIGB30N65F5ATMA1
STMicroelectronics