IRGR2B60KDPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 6.3A 35W DPAK
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRGR2B60KDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRGR2B60KDPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRGR2B60KDPBF for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6.3 A
- Current - Collector Pulsed (Icm): 8 A
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
- Power - Max: 35 W
- Switching Energy: 74µJ (on), 39µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: 11ns/150ns
- Test Condition: 400V, 2A, 100Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
Related Products
onsemi
ISL9V3040D3STV
Infineon Technologies
IRG4BC40WPBF
Rohm Semiconductor
RGTV80TK65DGVC11
STMicroelectronics
STGW19NC60H
STMicroelectronics
STGWA60NC60WDR
Rohm Semiconductor
RGCL80TS60GC11
Alpha & Omega Semiconductor Inc.
AOB10B65M1
Infineon Technologies
AIKW40N65DF5XKSA1
STMicroelectronics
STGW8M120DF3
onsemi