HGT1S2N120CN
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGT1S2N120CN Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGT1S2N120CN ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGT1S2N120CN into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
- Power - Max: 104 W
- Switching Energy: 96µJ (on), 355µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 25ns/205ns
- Test Condition: 960V, 2.6A, 51Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
Related Products
Infineon Technologies
IKW50N65ES5XKSA1
Infineon Technologies
IGB10N60TATMA1
STMicroelectronics
STGW40H120DF2
Infineon Technologies
IHW40N60RFKSA1
onsemi
TIG065E8-TL-H
Infineon Technologies
IRGB4061DPBF
onsemi
MGP7N60E
Infineon Technologies
SKW25N120FKSA1
Rohm Semiconductor
RGTH60TS65GC11
Fairchild Semiconductor