HGTG11N120CND
onsemi
onsemi
IGBT NPT 1200V 43A TO247-3
$4.79
Available to order
Reference Price (USD)
1+
$3.93000
10+
$3.52700
450+
$2.74127
900+
$2.45972
1,350+
$2.07447
Exquisite packaging
Discount
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Experience top-tier performance with the HGTG11N120CND Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTG11N120CND ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 43 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
- Power - Max: 298 W
- Switching Energy: 950µJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 23ns/180ns
- Test Condition: 960V, 11A, 10Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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