HGTG20N60B3
Harris Corporation
Harris Corporation
N-CHANNEL IGBT
$3.31
Available to order
Reference Price (USD)
1+
$5.04000
10+
$4.52800
450+
$3.51962
900+
$3.15814
1,350+
$2.66350
Exquisite packaging
Discount
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Enhance your electronic projects with the HGTG20N60B3 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTG20N60B3 ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTG20N60B3 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
- Power - Max: 165 W
- Switching Energy: 475µJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: -
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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