RGS80TSX2DGC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$11.68
Available to order
Reference Price (USD)
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$11.68000
500+
$11.5632
1000+
$11.4464
1500+
$11.3296
2000+
$11.2128
2500+
$11.096
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The RGS80TSX2DGC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGS80TSX2DGC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 198 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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