HN1B04FU-Y,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + NPN TR VCEO:-50
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
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Meet the HN1B04FU-Y,LXHF Toshiba Semiconductor and Storage s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the HN1B04FU-Y,LXHF demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 150MHz, 120MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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