NSV40300MDR2G
onsemi
onsemi
TRANS 2PNP 40V 3A 8SOIC
$0.36
Available to order
Reference Price (USD)
2,500+
$0.33602
Exquisite packaging
Discount
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Discover the NSV40300MDR2G BJT Array by onsemi, a versatile solution for modern electronic designs. This transistor array excels in high-speed switching and linear amplification, featuring matched pairs for consistent performance. Commonly used in audio amplifiers, LED drivers, and power management systems, the NSV40300MDR2G is a staple in telecommunications and renewable energy applications. With robust construction and ESD protection, it meets stringent industry standards while simplifying PCB layout for compact devices.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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