HN4A51JTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 120V 0.1A SMV
$0.46
Available to order
Reference Price (USD)
3,000+
$0.12994
6,000+
$0.12206
15,000+
$0.11419
30,000+
$0.10500
Exquisite packaging
Discount
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Engineered for reliability, the HN4A51JTE85LF BJT Array from Toshiba Semiconductor and Storage delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The HN4A51JTE85LF shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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