HTMN5130SSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 55V 2.6A 8SOIC
$0.94
Available to order
Reference Price (USD)
2,500+
$1.00780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the HTMN5130SSD-13 by Diodes Incorporated, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the HTMN5130SSD-13 ensures energy efficiency and robust performance. Diodes Incorporated's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2.6A
- Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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