IGW30N60TFKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 60A 187W TO247-3
$3.88
Available to order
Reference Price (USD)
1+
$3.94000
10+
$3.54200
240+
$2.90192
720+
$2.47035
1,200+
$2.08343
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGW30N60TFKSA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IGW30N60TFKSA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 1.46mJ
- Input Type: Standard
- Gate Charge: 167 nC
- Td (on/off) @ 25°C: 23ns/254ns
- Test Condition: 400V, 30A, 10.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Microchip Technology
APT50GT120B2RDQ2G
Renesas Electronics America Inc
RJH30H2DPK-M2#T2
Infineon Technologies
IGW15N120H3FKSA1
NTE Electronics, Inc
NTE3302
Infineon Technologies
IRG4BC20KDSTRRP
STMicroelectronics
STGWT40HP65FB
Infineon Technologies
IGW40N120H3FKSA1
IXYS
IXYT25N250CHV
Infineon Technologies
IKD10N60RFAATMA1
IXYS