IGW40N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
$7.19
Available to order
Reference Price (USD)
1+
$7.71000
10+
$7.02000
240+
$5.90542
720+
$5.21278
1,200+
$4.61048
Exquisite packaging
Discount
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Optimize your power systems with the IGW40N120H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IGW40N120H3FKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 483 W
- Switching Energy: 3.16mJ
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: 30ns/290ns
- Test Condition: 600V, 40A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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