IGP30N60H3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 60A 187W TO220-3
$3.34
Available to order
Reference Price (USD)
1+
$3.14000
10+
$2.81800
100+
$2.30860
500+
$1.96524
1,000+
$1.65743
Exquisite packaging
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The IGP30N60H3XKSA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IGP30N60H3XKSA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 1.17mJ
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 18ns/207ns
- Test Condition: 400V, 30A, 10.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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