IKD10N60RFAATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 150W PG-TO252-3
$1.36
Available to order
Reference Price (USD)
2,500+
$0.96390
Exquisite packaging
Discount
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Enhance your electronic projects with the IKD10N60RFAATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKD10N60RFAATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKD10N60RFAATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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