SGW13N60UFDTM
Fairchild Semiconductor

Fairchild Semiconductor
N-CHANNEL IGBT
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
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The SGW13N60UFDTM Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SGW13N60UFDTM ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SGW13N60UFDTM into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
- Power - Max: 60 W
- Switching Energy: 85µJ (on), 95µJ (off)
- Input Type: Standard
- Gate Charge: 25 nC
- Td (on/off) @ 25°C: 20ns/70ns
- Test Condition: 300V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)