IXBT10N170
IXYS
IXYS
IGBT 1700V 20A 140W TO268
$10.23
Available to order
Reference Price (USD)
30+
$8.43767
Exquisite packaging
Discount
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Upgrade your power management systems with the IXBT10N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXBT10N170 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXBT10N170 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
- Power - Max: 140 W
- Switching Energy: 6mJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 35ns/500ns
- Test Condition: 1360V, 10A, 56Ohm, 15V
- Reverse Recovery Time (trr): 360 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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