IGW40N60H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 80A 306W TO247-3
$3.25
Available to order
Reference Price (USD)
240+
$3.45475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IGW40N60H3FKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IGW40N60H3FKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IGW40N60H3FKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 306 W
- Switching Energy: 1.68mJ
- Input Type: Standard
- Gate Charge: 223 nC
- Td (on/off) @ 25°C: 19ns/197ns
- Test Condition: 400V, 40A, 7.9Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Infineon Technologies
IRGB4056DPBF
Infineon Technologies
IGW50N65H5FKSA1
STMicroelectronics
STGD20N45LZAG
Infineon Technologies
IRGP4660D-EPBF
onsemi
FGH40N60SFDTU
IXYS
IXGA30N120B3
Fairchild Semiconductor
ISL9V3036D3S
onsemi
HGTD1N120BNS9A
onsemi
FGA40T65SHD
Infineon Technologies