IKD15N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD15N60RC2ATMA1
$1.81
Available to order
Reference Price (USD)
1+
$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKD15N60RC2ATMA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKD15N60RC2ATMA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKD15N60RC2ATMA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 115.4 W
- Switching Energy: 570µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 18ns/374ns
- Test Condition: 400V, 15A, 49Ohm, 15V
- Reverse Recovery Time (trr): 129 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
Alpha & Omega Semiconductor Inc.
AOK60B65M3
STMicroelectronics
STGWT80H65FB
Infineon Technologies
IKY40N120CH3XKSA1
Renesas Electronics America Inc
RJH1CV6DPK-00#T0
Infineon Technologies
IRG7PH42U-EP
Infineon Technologies
IRGP4266PBF
Alpha & Omega Semiconductor Inc.
AOK40B60D1
IXYS
IXDH30N120D1
Rohm Semiconductor
RGT20TM65DGC9
Fairchild Semiconductor