IKY40N120CH3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 80A TO247-4
$11.11
Available to order
Reference Price (USD)
1+
$11.24000
10+
$10.23200
240+
$8.60846
720+
$7.59879
1,200+
$6.72080
Exquisite packaging
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Optimize your power systems with the IKY40N120CH3XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKY40N120CH3XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
- Power - Max: 500 W
- Switching Energy: 2.18mJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 190 nC
- Td (on/off) @ 25°C: 30ns/280ns
- Test Condition: 600V, 40A, 12Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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