RGTV80TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
2US SHORT-CIRCUIT TOLERANCE, 650
$6.37
Available to order
Reference Price (USD)
1+
$6.37000
500+
$6.3063
1000+
$6.2426
1500+
$6.1789
2000+
$6.1152
2500+
$6.0515
Exquisite packaging
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The RGTV80TK65GVC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTV80TK65GVC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 85 W
- Switching Energy: 1.02mJ (on), 710µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 39ns/113ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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