IKW30N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW30N65ET7XKSA1
$4.16
Available to order
Reference Price (USD)
1+
$4.16000
500+
$4.1184
1000+
$4.0768
1500+
$4.0352
2000+
$3.9936
2500+
$3.952
Exquisite packaging
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Discover the IKW30N65ET7XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKW30N65ET7XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKW30N65ET7XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 590µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: 20ns/245ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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