IXGX55N120A3H1
IXYS
IXYS
IGBT 1200V 125A 460W PLUS247
$16.40
Available to order
Reference Price (USD)
30+
$14.56867
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGX55N120A3H1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGX55N120A3H1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGX55N120A3H1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 125 A
- Current - Collector Pulsed (Icm): 400 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
- Power - Max: 460 W
- Switching Energy: 5.1mJ (on), 13.3mJ (off)
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: 23ns/365ns
- Test Condition: 960V, 55A, 3Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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