IMBF170R1K0M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 5.2A TO263-7
$7.29
Available to order
Reference Price (USD)
1+
$7.29000
500+
$7.2171
1000+
$7.1442
1500+
$7.0713
2000+
$6.9984
2500+
$6.9255
Exquisite packaging
Discount
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The IMBF170R1K0M1XTMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IMBF170R1K0M1XTMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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