IMBF170R650M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 7.4A TO263-7
$7.94
Available to order
Reference Price (USD)
1+
$7.94000
500+
$7.8606
1000+
$7.7812
1500+
$7.7018
2000+
$7.6224
2500+
$7.543
Exquisite packaging
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Optimize your power electronics with the IMBF170R650M1XTMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IMBF170R650M1XTMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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