IPB530N15N3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 21A D2PAK
$2.17
Available to order
Reference Price (USD)
1,000+
$0.79662
Exquisite packaging
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Discover the IPB530N15N3GATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPB530N15N3GATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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