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RUE002N02TL

Rohm Semiconductor
RUE002N02TL Preview
Rohm Semiconductor
MOSFET N-CH 20V 200MA EMT3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.07000
6,000+
$0.06300
15,000+
$0.05600
30,000+
$0.05250
75,000+
$0.04900
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416

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