IPD50N06S4L08ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A TO252-31
$1.51
Available to order
Reference Price (USD)
2,500+
$0.41303
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD50N06S4L08ATMA2 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD50N06S4L08ATMA2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
R6530KNXC7G
Alpha & Omega Semiconductor Inc.
AOTF11N60L
Alpha & Omega Semiconductor Inc.
AOTF125A60L
Infineon Technologies
IPD22N08S2L50ATMA1
Toshiba Semiconductor and Storage
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TPH2R003PL,LQ
Taiwan Semiconductor Corporation
BSS84W
STMicroelectronics
STD10NM60ND
Panjit International Inc.
PJQ5426_R2_00001
Vishay Siliconix